Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection

被引：128

作者：

Francioso, L ^{[1
]}

Forleo, A ^{[1
]}

Capone, S ^{[1
]}

Epifani, M ^{[1
]}

Taurino, AM ^{[1
]}

Siciliano, P ^{[1
]}

机构：

[1] CNR, IMM, Sez Lecce, I-73100 Lecce, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2006年 / 114卷 / 02期

关键词：

In2O3-SnO2; nanocrystalline thin films; sol-gel method; chemoresistive gas sensors; NO2;

D O I：

10.1016/j.snb.2005.03.124

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Nanocrystalline SnO2, In2O3 and In2O3-SnO2 thin films have been prepared by modified sol-gel methods making use of no-standard precursors and a suitable surfactant. The oxide thin films have been used as gas-sensing layers in chemoresistive gas sensors and their performances in the detection of nitrogen dioxide (2-20 ppm in dry air) have been analysed by electrical characterization in controlled atmosphere. The samples have been structurally and morphologically characterized by X-ray diffraction and SEM, respectively. Good gas-sensing responses towards NO, have been found for all the prepared samples with improved performances for the In2O3-SnO2 based sensor. The performances of the sensors have been discussed according to the surface chemical reactions between the gas phase and the semiconductor. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：646 / 655

页数：10

共 26 条

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