Atomic resolution imaging of InP(110) surface observed with ultrahigh vacuum atomic force microscope in noncontact mode

被引:42
作者
Sugawara, Y
Ohta, M
Ueyama, H
Morita, S
Osaka, F
Ohkouchi, S
Suzuki, M
Mishima, S
机构
[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA, IBARAKI 30026, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, ATSUGI, KANAGAWA 24301, JAPAN
[3] OLYMPUS OPT CO LTD, HACHIOJI, TOKYO 192, JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589182
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
True atomic resolution imaging of the cleaved semi-insulating InP(110) surface was demonstrated using an ultrahigh vacuum atomic force microscope (AFM) in noncontact mode. The force gradient acting on the tip was detected by the frequency modulation method. The rectangular lattice could be clearly observed. The image contrast suddenly changed during the scan, which suggests that the noncontact AFM imaging is performed under the condition of nearly monoatomic tip-sample force interaction. Atomic defects have been clearly and reproducibly observed. These results suggest that noncontact AFM has the potential for true atomic-scale lateral resolution and is quite effective for atomic surface structure analysis in real space.
引用
收藏
页码:953 / 956
页数:4
相关论文
共 13 条
[1]   FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].
ALBRECHT, TR ;
GRUTTER, P ;
HORNE, D ;
RUGAR, D .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673
[2]   ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
QUATE, CF ;
GERBER, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933
[3]  
BINNIG G, 1992, ULTRAMICROSCOPY, V42, P281
[4]   A STM STUDY OF THE INP (110) SURFACE [J].
EBERT, P ;
COX, G ;
POPPE, U ;
URBAN, K .
ULTRAMICROSCOPY, 1992, 42 :871-877
[5]   ATOMIC-RESOLUTION OF THE SILICON (111)-(7X7) SURFACE BY ATOMIC-FORCE MICROSCOPY [J].
GIESSIBL, FJ .
SCIENCE, 1995, 267 (5194) :68-71
[6]   ULTRAHIGH-VACUUM SCANNING FORCE MICROSCOPY - ATOMIC-SCALE RESOLUTION AT MONATOMIC CLEAVAGE STEPS [J].
HOWALD, L ;
HAEFKE, H ;
LUTHI, R ;
MEYER, E ;
GERTH, G ;
RUDIN, H ;
GUNTHERODT, HJ .
PHYSICAL REVIEW B, 1994, 49 (08) :5651-5656
[7]   OBSERVATION OF 7X7 RECONSTRUCTED STRUCTURE ON THE SILICON (111) SURFACE USING ULTRAHIGH-VACUUM NONCONTACT ATOMIC-FORCE MICROSCOPY [J].
KITAMURA, S ;
IWATSUKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (1B) :L145-L148
[8]   DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON DIFFRACTION INTENSITIES FROM INP (110) [J].
MEYER, RJ ;
DUKE, CB ;
PATON, A ;
TSANG, JC ;
YEH, JL ;
KAHN, A ;
MARK, P .
PHYSICAL REVIEW B, 1980, 22 (12) :6171-6183
[9]   TRUE ATOMIC-RESOLUTION BY ATOMIC FORCE MICROSCOPY THROUGH REPULSIVE AND ATTRACTIVE FORCES [J].
OHNESORGE, F ;
BINNIG, G .
SCIENCE, 1993, 260 (5113) :1451-1456
[10]   ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE WITH SAMPLE CLEAVING MECHANISM [J].
OHTA, M ;
SUGAWARA, Y ;
MORITA, S ;
NAGAOKA, H ;
MISHIMA, S ;
OKADA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :1705-1707