Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures

被引:61
作者
Prinz, VY
Seleznev, VA
Samoylov, VA
Gutakovsky, AK
机构
[1] Institute of Semiconductor Physics, Novosibirsk 630090, ave. Lavrenteva
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1016/0167-9317(95)00282-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new technique for fabrication of nano- and atomic- scale device elements and quantum systems which cannot be obtained by any other technology is proposed. The technique is based an experimentally established possibility to create atomically sharp-edged cracks of a desired length and direction in a given laver of heterostructure. Ultra-narrow (1 nm) and perfectly straight windows-slits in the GaAs laver-mask of semiconductor structures and atomicaly sharp -edged windows of a complicated form have been fabricfted for the fist time. It was shown, that the width of a window-slit can be varied with high precision needed for a self-alignment fabrication technology. Nerv maskless techniques for fabricating nanoscale elements are described.
引用
收藏
页码:439 / 442
页数:4
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