Epitaxial growth of the La-substituted BiFeO3 thin films

被引：10

作者：

Lee, YH ^{[1
]}

Lee, CC ^{[1
]}

Liu, ZX ^{[1
]}

Liang, CS ^{[1
]}

Wu, JM ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 05期

关键词：

D O I：

10.1149/1.2185837

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Multiferroic BiFeO3-based thin films were heteroepitaxially grown on LaNiO3/LaFeO3/MgO(001) substrates by radio frequency magnetron sputtering. The epitaxial BFO-based films were grown with pure perovskite phase and a cube-on-cube relationship at a low processing temperature of 450 degrees C. The partial substitution of La ions for Bi ions increased lattice parameters of the BFO film. With the La substitution, the significant improvement in dielectric, ferroelectric, and magnetic properties of the BFO films was observed. (c) 2006 The Electrochemical Society.

引用

页码：F38 / F40

页数：3

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