Defect and impurity diagnostics and process monitoring

被引:27
作者
Warta, W [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst, ISE, D-79110 Freiburg, Germany
关键词
silicon solar cells; defects; impurities; process monitoring; carrier lifetime;
D O I
10.1016/S0927-0248(01)00187-8
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The review focuses on four areas of defect and impurity diagnostics (i) the determination of parasitic resistances, (ii) quantum efficiency analysis including light-beam-induced current measurement systems which use spectrally resolved currents to determine local recombination in solar cells, (iii) methods to determine the recombination properties in Solar cell precursors and (iv) techniques suitable for the recognition of the type of impurity or defect, which is responsible for increased recombination. In general, emphasis is on those methods, which are capable of delivering spatially resolved information. The use of the specific metastability features of a defect for its identification is exemplified. In addition, carrier lifetime spectroscopy methods utilising the temperature or the injection dependence of defect recombination are outlined. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:389 / 401
页数:13
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