Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement

被引:96
作者
Brendel, R
Hirsch, M
Plieninger, R
Werner, JH
机构
[1] Max-Planck-Inst. F. F.
关键词
Manuscript received June 16; 1995; revised January 23; 1996. The review of this paper was arranged by Editor P. N. Panayotatos. This work was supported by the German Bundesministerium fur Bildung; Wissenschaft; Forschung und Technologie under Contract 0329634. The authors are with Max-Planck-Institut fur Festkorperforschung; 70569; Stuttgart; Germany. Publisher Item Identifier S 001 8-9383(96)04983-0;
D O I
10.1109/16.502422
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin-layer silicon solar cells utilize surface textures to increase light absorption and back surface fields to prevent recombination at the silicon-substrate interface. We present an analytical model for the internal quantum efficiency that accounts for light trapping and also considers carrier generation and recombination in back surface fields or substrates. We introduce a graphical representation of experimental data, the so-called Parameter-Confidence-Plot, which allows one to draw maximum information on diffusion lengths and surface recombination velocities from quantum efficiency measurements. The analysis is exemplified for state of the art thin-layer silicon solar cells with and without back surface fields.
引用
收藏
页码:1104 / 1113
页数:10
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