Towards Si1-xGex quantum-well resonant-state terahertz laser

被引：61

作者：

Altukhov, IV ^{[1
]}

Chirkova, EG

Sinis, VP

Kagan, MS

Gousev, YP

Thomas, SG

Wang, KL

Odnoblyudov, MA

Yassievich, IN

机构：

[1] RAS, Inst Radioengn & Elect, Moscow 101999, Russia

[2] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[3] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

[4] Lund Univ, Div Solid State Theory, S-22362 Lund, Sweden

[5] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1423771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1-xGex quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 mum and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer. (C) 2001 American Institute of Physics.

引用

页码：3909 / 3911

页数：3

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