Modeling of InGaAs MSM photodetector for circuit-level simulation

被引：26

作者：

Xiang, A ^{[1
]}

Wohlmuth, W ^{[1
]}

Fay, P ^{[1
]}

Kang, SM ^{[1
]}

Adesida, I ^{[1
]}

机构：

[1] CTR COMPOUND SEMICOND RES,URBANA,IL 61801

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1996年 / 14卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/50.495150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and de current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

引用

页码：716 / 723

页数：8

共 17 条

[1] CUTOFF FREQUENCY AND RESPONSIVITY LIMITATION OF ALINAS/GAINAS MSM PD USING A 2-DIMENSIONAL BIPOLAR PHYSICAL MODEL [J].