CUTOFF FREQUENCY AND RESPONSIVITY LIMITATION OF ALINAS/GAINAS MSM PD USING A 2-DIMENSIONAL BIPOLAR PHYSICAL MODEL

被引:15
作者
ASHOUR, IS
ELKADI, H
SHERIF, K
VILCOT, JP
DECOSTER, D
机构
[1] Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 9929, Département Hyperfréquences et Semiconducteurs, Domaine Universitaire Scientifique de Villeneuve d’ Ascq, Villeneuve d'Ascq Cedex
关键词
D O I
10.1109/16.370075
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside illumination technique and a thin absorbing layer we can reach a cutoff frequency as high as 65 GHz with a responsivity of 0.2 A/W.
引用
收藏
页码:231 / 238
页数:8
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