THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM

被引：44

作者：

BRENNAN, K ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1502 / 1510

页数：9

相关论文

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