THEORY OF THE CHANNELING AVALANCHE PHOTODIODE

被引：10

作者：

BRENNAN, K ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期

关键词：

D O I：

10.1109/T-ED.1985.22296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2467 / 2478

页数：12

共 26 条

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HESS, K .

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[5]

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[7] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

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APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[8] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J].

CAPASSO, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1388-1395

[9] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

CAPASSO, F ;

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[10]

CAPASSO F, 1982, I PHYS C SER, V63, P473

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