THEORY OF THE CHANNELING AVALANCHE PHOTODIODE

被引:10
作者
BRENNAN, K [1 ]
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
关键词
D O I
10.1109/T-ED.1985.22296
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2467 / 2478
页数:12
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共 26 条
[11]  
CHANG YC, 1983, APPL PHYS LETT, V42, P26
[12]   IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].
CHIN, R ;
HOLONYAK, N ;
STILLMAN, GE ;
TANG, JY ;
HESS, K .
ELECTRONICS LETTERS, 1980, 16 (12) :467-469
[13]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[14]   ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].
GRANT, WN .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203
[15]  
KELDYSH LV, 1965, SOV PHYS JETP-USSR, V21, P1135
[16]  
KELDYSH LV, 1965, ZH EKSP TEOR FIZ, V48, P1962
[17]   HYBRID METHOD FOR HOT ELECT)ON CALCULATIONS [J].
LEBWOHL, PA ;
PRICE, PJ .
SOLID STATE COMMUNICATIONS, 1971, 9 (14) :1221-&
[18]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[19]   ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS [J].
MILLER, RC ;
KLEINMAN, DA ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1984, 29 (12) :7085-7087
[20]  
MILLER RC, 1984, PHYS REV B, V29, P3470