2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

被引：123

作者：

Garbuzov, DZ ^{[1
]}

Lee, H

Khalfin, V

Martinelli, R

Connolly, JC

Belenky, GL

机构：

[1] Sarnoff Corp, Princeton, NJ 08543 USA

[2] SUNY Stony Brook, Stony Brook, NY 11794 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 07期

关键词：

broad-waveguide separate confinement quantum-well laser structure; continuous-wave operation; heavily strained quantum well; mid-infrared AlGaAsSb-InGaAsSb diode lasers;

D O I：

10.1109/68.769710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach in the design of (A1)InGaAsSb-GaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature lasing up to 2.7 mu m This has been achieved by using quasiternary heavily strained InGaSb(As) QW's inside a broad-waveguide SCH laser structure. The QW compositions are chosen in the region outside the miscibility gap and, as a consequence, do not suffer front clustering and composition inhomogeneity normally found with quaternary InGaAsSb compounds of 2.3-2.7-mu m spectral range, Very low threshold current density (similar to 300 A/cm(2)) and high CW output powers (>100 mW) were obtained from devices operating in the 2.3-2.6-mu m wavelength range.

引用

收藏

页码：794 / 796

页数：3

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