Optical study of GaN: Mn co-doped with Mg grown by metal organic vapor phase epitaxy

被引：18

作者：

Korotkov, RY ^{[1
]}

Gregie, JM ^{[1
]}

Han, B ^{[1
]}

Wessels, BW ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

GaN; photoluminescence; Mn doping;

D O I：

10.1016/S0921-4526(01)00654-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988+/-0.001 eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20-95 mus and depended on emission energy. (C), 2001 Elsevier Science B.V. All rights reserved.

引用

页码：18 / 21

页数：4

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