Composition spread metal thin film fabrication technique based on ion beam sputter deposition

被引：12

作者：

Ahmet, P ^{[1
]}

Nagata, T ^{[1
]}

Kukuruznyak, D ^{[1
]}

Yagyu, S ^{[1
]}

Wakayama, Y ^{[1
]}

Yoshitake, M ^{[1
]}

Chikyow, T ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 07期

关键词：

ion beam; metal thin film; composition spread; metal gate;

D O I：

10.1016/j.apsusc.2005.05.078

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2472 / 2476

页数：5

共 18 条

[1]

Ahmet P, 2004, APPL PHYS A-MATER, V79, P837, DOI [10.1007/s00339-004-2627-9, 10.1007/s0039-004-2627-9]

[2]

[Anonymous], 1982, MOS METAL OXIDE SEMI

[3] A combinatorial approach to the discovery and optimization of luminescent materials [J].

Danielson, E ;

Golden, JH ;

McFarland, EW ;

Reaves, CM ;

Weinberg, WH ;

Wu, XD .

NATURE, 1997, 389 (6654) :944-948

[4] Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach [J].

Fukumura, T ;

Ohtani, M ;

Kawasaki, M ;

Okimoto, Y ;

Kageyama, T ;

Koida, T ;

Hasegawa, T ;

Tokura, Y ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3426-3428

[5] MULTIPLE-SAMPLE-CONCEPT IN MATERIALS RESEARCH - SYNTHESIS, COMPOSITIONAL ANALYSIS AND TESTING OF ENTIRE MULTICOMPONENT SYSTEMS [J].

HANAK, JJ .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (11) :964-&

[6]

Kedzierski J, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P247, DOI 10.1109/IEDM.2002.1175824

[7] Fully silicided NiSi gate on La2O3 MOSFETs [J].

Lin, CY ;

Ma, MW ;

Chin, A ;

Yeo, YC ;

Zhu, CX ;

Li, MF ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :348-350

[8] Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics [J].

Schaeffer, JK ;

Samavedam, SB ;

Gilmer, DC ;

Dhandapani, V ;

Tobin, PJ ;

Mogab, J ;

Nguyen, BY ;

White, BE ;

Dakshina-Murthy, S ;

Rai, RS ;

Jiang, ZX ;

Martin, R ;

Raymond, MV ;

Zavala, M ;

La, LB ;

Smith, JA ;

Garcia, R ;

Roan, D ;

Kottke, M ;

Gregory, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01) :11-17

[9] High dielectric constant Hf-Sn-Ti-O thin films [J].

Schneemeyer, LF ;

van Dover, RB ;

Fleming, RM .

APPLIED PHYSICS LETTERS, 1999, 75 (13) :1967-1969

[10]

SUN JYC, 1989, DIGEST TECHNICAL PAP, P17

← 1 2 →