Fully silicided NiSi gate on La2O3 MOSFETs

被引：28

作者：

Lin, CY ^{[1
]}

Ma, MW

Chin, A

Yeo, YC

Zhu, CX

Li, MF

Kwong, DL

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore, Singapore

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 05期

关键词：

CoSi2; La2O3; MOSFET; NiSi;

D O I：

10.1109/LED.2003.812569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated the fully silicided NiSi on La2O3 for n- and p-MOSFETs. For 900 degreesC fully silicided CoSi2 on La2O3 gate dielectric with 1.5 mn EOT, the, gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gat e leakage current density of 2 x 10(-4) A/cm(2) at 1 V is measured for 400 degreesC formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm(2)/V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO2 MOSFETs without using H-2 annealing.

引用

页码：348 / 350

页数：3

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