Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si

被引：25

作者：

Lin, CY ^{[1
]}

Chen, WJ

Lai, CH

Chin, A

Liu, J

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Huwei Inst Technol, Dept Mat Sci & Engn, Huwei, Taiwan

[3] United Microelect Cooperat, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期

关键词：

Co; Ni; SiGe; silicide;

D O I：

10.1109/LED.2002.801288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.

引用

页码：464 / 466

页数：3

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