Self-aligned ultra thin HfO2CMOS transistors with high quality CVD TaN gate electrode

被引：20

作者：

Lee, CH ^{[1
]}

Lee, JJ ^{[1
]}

Bai, WP ^{[1
]}

Bac, S ^{[1
]}

Sim, JH ^{[1
]}

Lei, X ^{[1
]}

Clark, RD ^{[1
]}

Harada, Y ^{[1
]}

Niwa, M ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

in this paper, we have demonstrated and characterized self-aligned, gate-first CVD TaN gate n- and p-MOS transistors with ultra thin (EOT = 11similar to12Angstrom) CVD HfO2 gate dielectrics. These transistors show no sign of gate deletion and excellent thermal stability after 1000degreesC, 30s N-2 anneal. Compared with PVD TaN devices, the CVD TaN/HfO2 devices exhibit lower leakage current, smaller CV hysteresis, superior interface properties, higher transconductance, and superior electron and hole mobility.

引用

页码：82 / 83

页数：2

共 9 条

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[7]

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