Effects of high-temperature forming gas anneal on HfO2 MOSFET performance

被引：35

作者：

Onishi, K ^{[1
]}

Kang, CS ^{[1
]}

Choi, R ^{[1
]}

Cho, HJ ^{[1
]}

Gopalan, S ^{[1
]}

Nieh, R ^{[1
]}

Krishnan, S ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of forming gas (FG) annealing on HfO2 MOSFET performance have been studied. High-temperature (500-600degreesC) FG annealing has been shown to significantly improve carrier mobility and subthreshold slopes for both N and PMOSFET's. The improvement has been correlated to the reduction in interfacial state density. The effectiveness of FG annealing has also been examined on samples that underwent surface preparations with NH3 or NO annealing prior to HfO2 deposition. It was found that FG annealing did not degrade PMOS negative bias temperature instability characteristics.

引用

页码：22 / 23

页数：2

共 4 条

[1] High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation [J].

Choi, R ;

Kang, CS ;

Lee, BH ;

Onishi, K ;

Nieh, R ;

Gopalan, S ;

Dharmarajan, E ;

Lee, JC .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :15-16

[2]

Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI DOI 10.1109/IEDM.2001.979537

[3]

Lee BH, 2000, INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, P39

[4]

ONISHI K, 2001, IEDM, P659

← 1 →