Cu contamination effect in oxynitride gate dielectrics

被引：7

作者：

Lin, YH ^{[1
]}

Pan, FM

Liao, YC

Chen, YC

Hsieh, IJ

Chin, A

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Nanodevice Lab, Hsinchu, Taiwan

[3] Chung Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 11期

关键词：

D O I：

10.1149/1.1407834

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.

引用

收藏

页码：G627 / G629

页数：3

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