COPPER PRECIPITATION AT THE SILICON SILICON-DIOXIDE INTERFACE - ROLE OF OXYGEN

被引：22

作者：

CORREIA, A ^{[1
]}

BALLUTAUD, D ^{[1
]}

MAURICE, JL ^{[1
]}

机构：

[1] CNRS, PHYS MAT LAB, F-92195 MEUDON, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 3A期

关键词：

SILICON SILICON-DIOXIDE INTERFACE; COPPER PRECIPITATION; OXIDATION STACKING FAULTS; ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.33.1217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper contamination is often the origin of the lifetime degradation during processing of solar cells. Its behaviour during oxidation is investigated in this paper. It is shown by analytical transmission electron microscopy that the thermal oxidation of Czochralski silicon induces at the silicon-silicon-dioxide interface the precipitation of large copper colonies associated with oxidation-stacking-fault (OSF) Frank partial dislocations decorated with oxygen. The precipitation process is different in float-zone silicon where the Frank partial dislocations bounding the OSFs are themselves nucleation sites for copper precipitates.

引用

页码：1217 / 1222

页数：6

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