TRANSITION-METALS IN SILICON AND THEIR GETTERING BEHAVIOR

被引：31

作者：

GRAFF, K

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90217-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：63 / 69

页数：7

共 34 条

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[2]

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[7] ON THE QUESTION OF MULTIPLE CHARGE STATES OF INTERSTITIAL FE AND CR IN SILICON [J].

FEICHTINGER, H ;

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[8] ENERGY-LEVELS AND SOLUBILITY OF INTERSTITIAL CHROMIUM IN SILICON [J].

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[9]

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[10]

Graff K., 1983, SEMICON/EUROPA 1983. Semiconductor Processing and Equipment Symposium, P9

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