THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON

被引：98

作者：

BEELER, F ^{[1
]}

ANDERSEN, OK ^{[1
]}

SCHEFFLER, M ^{[1
]}

机构：

[1] PHYS TECH BUNDESANSTALT,D-3300 BRUNSWICK,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.55.1498

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1498 / 1501

页数：4

共 26 条

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[8] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

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[9]

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[10]

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