THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON

被引：90

作者：

DELEO, GG

WATKINS, GD

FOWLER, WB

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.1851

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1851 / 1858

页数：8

共 21 条

[1] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[3] LOCALIZED DESCRIPTION OF ELECTRONIC-STRUCTURE OF COVALENT SEMICONDUCTORS .1. PERFECT CRYSTALS [J].

CARTLING, BG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (19) :3171-3182

[4]

CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[5] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J].

FAZZIO, A ;

LEITE, JR .

PHYSICAL REVIEW B, 1980, 21 (10) :4710-4720

[6]

FAZZIO A, 1979, INT J QUANTUM CHEM S, V13, P394

[7] PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION [J].

GROBMAN, WD ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1972, 29 (22) :1508-&

[8] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].

HALDANE, FDM ;

ANDERSON, PW .

PHYSICAL REVIEW B, 1976, 13 (06) :2553-2559

[9]

Ham F. S., 1972, ELECT PARAMAGNETIC R

[10] ELECTRONIC STATES OF A SUBSTITUTIONAL CHROMIUM IMPURITY IN GAAS [J].

HEMSTREET, LA ;

DIMMOCK, JO .

PHYSICAL REVIEW B, 1979, 20 (04) :1527-1537

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