LOCALIZED DESCRIPTION OF ELECTRONIC-STRUCTURE OF COVALENT SEMICONDUCTORS .1. PERFECT CRYSTALS

[1] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[2] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[3] A MODEL FOR SELF-CONSISTENT CLUSTER CALCULATIONS OF ELECTRONIC-STRUCTURE OF DOPED SEMICONDUCTORS BY MEANS OF SCF-X-ALPHA SCATTERED WAVE METHOD [J]. CHEMICAL PHYSICS LETTERS, 1973, 21 (02) : 380 - 384

[4] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[5] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[6] APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 459 - &

[7] INTRINSIC EDGE ABSORPTION IN DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1370) : 312 - +

[8] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[9] PRECISE LATTICE CONSTANTS OF GERMANIUM, ALUMINUM, GALLIUM ARSENIDE, URANIUM, SULPHUR, QUARTZ AND SAPPHIRE [J]. ACTA CRYSTALLOGRAPHICA, 1962, 15 (JUN): : 578 - &

[10] L-SERIES EMISSION SPECTRUM OF GERMANIUM [J]. PHYSICAL REVIEW, 1968, 172 (03): : 625 - +

[1] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[2] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[3] A MODEL FOR SELF-CONSISTENT CLUSTER CALCULATIONS OF ELECTRONIC-STRUCTURE OF DOPED SEMICONDUCTORS BY MEANS OF SCF-X-ALPHA SCATTERED WAVE METHOD [J]. CHEMICAL PHYSICS LETTERS, 1973, 21 (02) : 380 - 384

[4] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[5] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[6] APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 459 - &

[7] INTRINSIC EDGE ABSORPTION IN DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1370) : 312 - +

[8] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[9] PRECISE LATTICE CONSTANTS OF GERMANIUM, ALUMINUM, GALLIUM ARSENIDE, URANIUM, SULPHUR, QUARTZ AND SAPPHIRE [J]. ACTA CRYSTALLOGRAPHICA, 1962, 15 (JUN): : 578 - &

[10] L-SERIES EMISSION SPECTRUM OF GERMANIUM [J]. PHYSICAL REVIEW, 1968, 172 (03): : 625 - +