LOCALIZED DESCRIPTION OF ELECTRONIC-STRUCTURE OF COVALENT SEMICONDUCTORS .1. PERFECT CRYSTALS

[21] MODIFIED MUFFIN TIN POTENTIALS FOR BAND STRUCTURE OF SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (05): : L85 - &

[22] KIENDL H, 1967, Z NATURFORSCH PT A, VA 22, P79

[23] CALCULATION OF SOFT X-RAY EMISSION SPECTRA OF SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (01): : 70 - &

[24] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J]. PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1088 - +

[25] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 388 - 392

[26] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[27] EXTENDED HUCKEL THEORY CALCULATION OF ATOM MIGRATION ENERGIES IN 2-DIMENSIONAL GRAPHITE [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (01) : 47 - &

[28] OPTIMIZATION OF STATISTICAL EXCHANGE PARAMETER-ALPHA FOR FREE ATOMS H THROUGH NB [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07): : 2466 - &

[29] Slater J.C., 1972, ADV QUANTUM CHEM, V6, P1, DOI [10.1016/S0065-3276(08)60541- 9, DOI 10.1016/S0065-3276(08)60541-9]

[30] SELF-CONSISTENT ORTHOGONALIZED-PLANE-WAVE ENERGY-BAND STUDY OF SILICON [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1635 - &

[21] MODIFIED MUFFIN TIN POTENTIALS FOR BAND STRUCTURE OF SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (05): : L85 - &

[22] KIENDL H, 1967, Z NATURFORSCH PT A, VA 22, P79

[23] CALCULATION OF SOFT X-RAY EMISSION SPECTRA OF SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (01): : 70 - &

[24] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J]. PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1088 - +

[25] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 388 - 392

[26] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[27] EXTENDED HUCKEL THEORY CALCULATION OF ATOM MIGRATION ENERGIES IN 2-DIMENSIONAL GRAPHITE [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (01) : 47 - &

[28] OPTIMIZATION OF STATISTICAL EXCHANGE PARAMETER-ALPHA FOR FREE ATOMS H THROUGH NB [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07): : 2466 - &

[29] Slater J.C., 1972, ADV QUANTUM CHEM, V6, P1, DOI [10.1016/S0065-3276(08)60541- 9, DOI 10.1016/S0065-3276(08)60541-9]

[30] SELF-CONSISTENT ORTHOGONALIZED-PLANE-WAVE ENERGY-BAND STUDY OF SILICON [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1635 - &