共 41 条
[1]
INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
[J].
PHYSICAL REVIEW,
1966, 143 (02)
:636-&
[2]
ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964, 134 (5A)
:1337-&
[3]
BAND-THEORETIC MODEL FOR PHOTOELECTRIC EFFECT IN SILICON
[J].
PHYSICAL REVIEW,
1965, 139 (2A)
:A489-&
[4]
ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
[J].
PHYSICAL REVIEW,
1966, 142 (02)
:530-&
[5]
ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
[J].
PHYSICAL REVIEW,
1967, 154 (03)
:696-+
[6]
BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
[J].
PHYSICAL REVIEW,
1966, 141 (02)
:789-+
[7]
SELF-CONSISTENT ORTHOGONALIZED-PLANE-WAVE BAND CALCULATION ON GAAS
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 1 (02)
:724-&
[8]
FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM
[J].
PHYSICAL REVIEW,
1967, 160 (03)
:649-+
[9]
EUWEMA R, TO BE PUBLISHED
[10]
CRYSTALLINE INTERPOLATION WITH APPLICATIONS TO BRILLOUIN-ZONE AVERAGES AND ENERGY-BAND INTERPOLATION
[J].
PHYSICAL REVIEW,
1969, 178 (03)
:1419-+