MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON

被引：62

作者：

DELEO, GG

WATKINS, GD

FOWLER, WB

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.4962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4962 / 4971

页数：10

共 17 条

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