ENERGY-LEVEL OF THE 0 TO + CHARGE TRANSITION OF SUBSTITUTIONAL MANGANESE IN SILICON

被引：10

作者：

CZAPUTA, R ^{[1
]}

FEICHTINGER, H ^{[1
]}

OSWALD, J ^{[1
]}

SITTER, H ^{[1
]}

HAIDER, M ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.55.758

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：758 / 760

页数：3

共 10 条

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APPLIED PHYSICS LETTERS, 1981, 39 (09) :706-708

[6]

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[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

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[8] PROPERTIES OF THE DOPING LEVELS OF MANGANESE AND VANADIUM IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (02) :549-556

[9]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223

[10] TRANSITION-METALS IN SILICON [J].

WEBER, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01) :1-22

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