ON THE QUESTION OF MULTIPLE CHARGE STATES OF INTERSTITIAL FE AND CR IN SILICON

被引：5

作者：

FEICHTINGER, H

CZAPUTA, R

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 02期

关键词：

D O I：

10.1002/pssa.2210790249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K143 / K146

页数：4

共 16 条

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