DONATION CHARACTERISTICS OF IRON IN SILICON

[1] BEMSKI G, 1964, J APPL PHYS, V35, P2893

[2] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[3] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[4] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] DETECTION OF MINORITY-CARRIER TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 539 - 545

[7] EVIDENCE OF RECOMBINATION CENTERS IN THE DONOR LEVEL OF SILICON DIODES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (01): : 127 - 136

[8] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 601 - 610

[9] HEAT-TREATMENT OF SILICON AND THE NATURE OF THERMALLY INDUCED DONORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1370 - 1374

[10] IRON-BORON PAIRING IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1697 - &

[1] BEMSKI G, 1964, J APPL PHYS, V35, P2893

[2] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[3] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[4] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] DETECTION OF MINORITY-CARRIER TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 539 - 545

[7] EVIDENCE OF RECOMBINATION CENTERS IN THE DONOR LEVEL OF SILICON DIODES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (01): : 127 - 136

[8] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 601 - 610

[9] HEAT-TREATMENT OF SILICON AND THE NATURE OF THERMALLY INDUCED DONORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1370 - 1374

[10] IRON-BORON PAIRING IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1697 - &