QUENCHED-IN DEFECT IN BORON-DOPED SILICON

被引：69

作者：

GERSON, JD ^{[1
]}

CHENG, LJ ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,DEPT PHYS,ALBANY,NY 12222

来源：

关键词：

D O I：

10.1063/1.323505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4821 / 4822

页数：2

共 7 条

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[2] LANG DV, 1974, J APPL PHYS, V45, P7
[3] LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630
[4] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON
LEE, YH
CHENG, LJ
GERSON, JD
MOONEY, PM
CORBETT, JW
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (01) : 109 - 111
[5] MAYER A, 1972, SOLID STATE TECHNOL, V15, P1138
[6] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS
MOONEY, PM
CHENG, LJ
SULI, M
GERSON, JD
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3836 - 3843
[7] DEFECTS IN QUENCHED SILICON
SWANSON, ML
[J]. PHYSICA STATUS SOLIDI, 1969, 33 (02): : 721 - &