DETECTION OF MINORITY-CARRIER TRAPS IN SEMICONDUCTORS

[1] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[2] LEMKE H, 1981, PHYS STAT SOL A, V63

[3] BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 975 - 990

[4] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[5] MEASUREMENT OF TRAPPED-MINORITY-CARRIER THERMAL EMISSION RATES FROM AU, AG, AND CO TRAPS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 157 - &

[6] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT SILVER CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 457 - &

[1] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[2] LEMKE H, 1981, PHYS STAT SOL A, V63

[3] BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 975 - 990

[4] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[5] MEASUREMENT OF TRAPPED-MINORITY-CARRIER THERMAL EMISSION RATES FROM AU, AG, AND CO TRAPS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 157 - &

[6] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT SILVER CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 457 - &