LOCALIZATION OF FEO-LEVEL IN SILICON

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] BENDIK NT, 1970, DOKL AKAD NAUK SSSR+, V195, P107

[3] BENDIK NT, 1970, SOV PHYS-SOLID STATE, V12, P1340

[4] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[5] DIMITRENKO NN, 1974, PHYS STAT SOL A, V26, pK45

[6] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +

[7] FEICHTINGER H, 1978, SEP INT C RAD EFF DE

[8] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[9] ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02): : K87 - K90

[10] GOETZBERGER A, 1976, CRC CRITICAL REV SOL

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] BENDIK NT, 1970, DOKL AKAD NAUK SSSR+, V195, P107

[3] BENDIK NT, 1970, SOV PHYS-SOLID STATE, V12, P1340

[4] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[5] DIMITRENKO NN, 1974, PHYS STAT SOL A, V26, pK45

[6] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +

[7] FEICHTINGER H, 1978, SEP INT C RAD EFF DE

[8] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[9] ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02): : K87 - K90

[10] GOETZBERGER A, 1976, CRC CRITICAL REV SOL