ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON

被引：8

作者：

GLINCHUK, KD ^{[1
]}

LITOVCHENKO, NM ^{[1
]}

MERKER, R ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 33卷 / 02期

关键词：

D O I：

10.1002/pssa.2210330245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K87 / K90

页数：4

共 10 条

[1] Boltaks B.I., 1972, DIFFUSION POINT DEFE
[2] DEKOCK AJR, 1973, PHILIPS RES REP S, V1
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[4] INVESTIGATION OF QUENCHED-IN-DEFECTS IN GE AND SI BY MEANS OF 64CU
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[5] SOLUBILITY AND ORIGIN OF THERMALLY INDUCED RECOMBINATION CENTERS IN N-TYPE AND P-TYPE SILICON
GLINCHUK, KD
LITOVCHENKO, NM
MERKER, R
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : K109 - K113
[6] DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON
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LINNIK, LF
MERKER, R
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02): : 749 - &
[7] MILNES AG, 1974, DEEP IMPURITIES SEMI
[8] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday
Stutzmarm, Martin
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3024 - 3026
[9] DEFECTS IN QUENCHED SILICON
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[J]. PHYSICA STATUS SOLIDI, 1969, 33 (02): : 721 - &
[10] RECOMBINATION AT IRON ATOMS AND AT THERMALLY GENERATED LATTICE DEFECTS IN SILICON
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ZECH, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02): : K133 - &