SOLUBILITY AND ORIGIN OF THERMALLY INDUCED RECOMBINATION CENTERS IN N-TYPE AND P-TYPE SILICON

被引：7

作者：

GLINCHUK, KD ^{[1
]}

LITOVCHENKO, NM ^{[1
]}

MERKER, R ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1002/pssa.2210300245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K109 / K113

页数：5

共 11 条

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[2]

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[3]

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[5] DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON [J].

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LITOVCHE.NM ;

LINNIK, LF ;

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02) :749-&

[6]

KONOROVA LF, 1974, FIZ TVERD TELA+, V16, P547

[7] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J].

LESKOSCHEK, W ;

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VIDRICH, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :601-610

[8] DEFECTS IN QUENCHED SILICON [J].

SWANSON, ML .

PHYSICA STATUS SOLIDI, 1969, 33 (02) :721-&

[9]

Swenson G., 1970, Physica Status Solidi A, V2, P803, DOI 10.1002/pssa.19700020417

[10] RECOMBINATION AT IRON ATOMS AND AT THERMALLY GENERATED LATTICE DEFECTS IN SILICON [J].

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ZECH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02) :K133-&

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