METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS

被引：123

作者：

CHANTRE, A

BOIS, D

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.31.7979

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7979 / 7988

页数：10

共 38 条

[1] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95
[2] PAIRING REACTIONS OF INTERSTITIAL COBALT AND SHALLOW ACCEPTORS IN SILICON OBSERVED IN MOSSBAUER-SPECTROSCOPY
BERGHOLZ, W
[J]. PHYSICA B & C, 1983, 116 (1-3): : 312 - 317
[3] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[4] INFLUENCE OF SCAN SPEED ON DEEP LEVEL DEFECTS IN CW LASER ANNEALED SILICON
CHANTRE, A
KECHOUANE, M
AUVERT, G
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 98 - 100
[5] DEFECTS IN ULTRAFAST QUENCHED ALUMINUM-DOPED SILICON
CHANTRE, A
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 263 - 265
[6] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON
CHANTRE, A
KECHOUANE, M
BOIS, D
[J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552
[7] DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME
CHANTRE, A
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 269 - 280
[8] CHANTRE A, UNPUB
[9] CHANTRE A, 1983, DEFECTS SEMICONDUCTO, V2, P547
[10] CHROMIUM AND CHROMIUM-BORON PAIRS IN SILICON
CONZELMANN, H
GRAFF, K
WEBER, ER
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03): : 169 - 175