DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME

被引：8

作者：

CHANTRE, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

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D O I：

10.1051/jphyscol:1983542

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学科分类号：

摘要：

引用

页码：269 / 280

页数：12

共 28 条

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[3] CHANTRE A, 1983, DEFECTS SEMICONDUCTO
[4] CHANTRE A, 1983, UNPUB APPL PHYS LETT
[5] CHANTRE A, 1982, UNPUB DEFECTS SEMICO
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03): : 169 - 175
[7] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118
[8] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[9] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
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EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[10] Gonchond J. P., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P189