DEFECTS IN ULTRAFAST QUENCHED ALUMINUM-DOPED SILICON

被引：11

作者：

CHANTRE, A

机构：

来源：

关键词：

D O I：

10.1063/1.95651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：263 / 265

页数：3

共 19 条

[1] INFLUENCE OF SCAN SPEED ON DEEP LEVEL DEFECTS IN CW LASER ANNEALED SILICON
CHANTRE, A
KECHOUANE, M
AUVERT, G
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 98 - 100
[2] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON
CHANTRE, A
KECHOUANE, M
BOIS, D
[J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552
[3] DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME
CHANTRE, A
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 269 - 280
[4] CHANTRE A, UNPUB
[5] CHANTRE A, 1983, DEFECTS SEMICONDUCTO, V2, P547
[6] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118
[7] GOSELE U, 1983, DEFECTS SEMICONDUCTO, V2, P45
[8] THE PROPERTIES OF IRON IN SILICON
GRAFF, K
PIEPER, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674
[9] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221
[10] OXYGEN-RELATED DONOR STATES IN SILICON
KIMERLING, LC
BENTON, JL
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 410 - 412