STRUCTURE OF COPPER PRECIPITATES IN A SYMMETRICAL SILICON TILT BICRYSTAL - HIGH-RESOLUTION ELECTRON-MICROSCOPY AND ENERGY-DISPERSIVE X-RAY-ANALYSIS

被引：19

作者：

ELKAJBAJI, M ^{[1
]}

DESSUS, J ^{[1
]}

THIBAULT, J ^{[1
]}

机构：

[1] FAC SCI AGADIR,DEPT PHYS,AGADIR,MOROCCO

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1992年 / 66卷 / 06期

关键词：

D O I：

10.1080/01418619208247996

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Precipitates have been found in silicon bicrystals after heat treatments. Most of them are localized in the grain-boundary (GB) plane where they form disc colonies. The GB precipitates have been examined using conventional electron microscopy, high-resolution electron microscopy and energy-dispersive X-ray analysis techniques. They contain a large amount of copper. The structure of the precipitates in the GB is b.c.c. and is likely to be disorderd. The grain-precipitate epitaxy relationship has been determined. A mechanism for the copper precipitation in disc colonies along the GB is proposed.

引用

页码：873 / 888

页数：16

共 22 条

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[2]

Bourret A., 1989, Polycrystalline Semiconductors, Grain Boundaries and Interfaces. Proceedings of the International Symposium, P8

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