NEW MORPHOLOGICAL TYPES OF CUSI PRECIPITATES IN SILICON AND THEIR ELECTRICAL EFFECTS

被引：6

作者：

GLEICHMANN, R ^{[1
]}

BLUMTRITT, H ^{[1
]}

HEYDENREICH, J ^{[1
]}

机构：

[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTR MIKROSKOPIE,DDR-4010 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：527 / 538

页数：12

共 11 条

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[9] DRAGGING OF PRECIPITATE PARTICLES BY CLIMBING DISLOCATIONS IN SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :488-489

[10] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON [J].

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