PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS

被引：106

作者：

NES, E

WASHBURN, J

机构：

来源：

关键词：

D O I：

10.1063/1.1660771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3562 / &

共 36 条

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ASHBY, MF
BROWN, LM
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[2] THE GROWTH OF PRECIPITATES
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BRANDON, DG
NUTTING, J
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[3] Brooks H., 1952, MET INTERFACES AM SO, P20
[4] NUCLEATION ON DISLOCATIONS
CAHN, JW
[J]. ACTA METALLURGICA, 1957, 5 (03): : 169 - 172
[5] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER
COLLINS, CB
CARLSON, RO
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414
[6] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &
[7] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474
[8] DASH WC, 1960, J APPL PHYS, V31, P205
[9] FARQUHAR MCM, 1945, J IRON STEEL I, V152, P457
[10] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS
FIERMANS, L
VENNIK, J
[J]. PHYSICA STATUS SOLIDI, 1965, 12 (01): : 277 - &