INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON

被引：51

作者：

PASEMANN, L ^{[1
]}

BLUMTRITT, H ^{[1
]}

GLEICHMANN, R ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4020 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1002/pssa.2210700125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：197 / 209

页数：13

共 21 条

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