OBSERVATION OF DISLOCATIONS AND MICROPLASMA SITES IN SEMICONDUCTORS BY DIRECT CORRELATIONS OF STEBIC, STEM AND ELS

被引：26

作者：

FATHY, D

SPARROW, TG

VALDRE, U

机构：

[1] UNIV BOLOGNA,IST FIS A RIGHI,BOLOGNA,ITALY

[2] UNIV BOLOGNA,CNR,GRP NAZL STRUTTURA MAT,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / MAR期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00273.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：263 / 273

页数：11

共 15 条

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DARLINGTON, EH
SPARROW, TG
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (07): : 596 - 600
[4] Fathy D., 1980, Electron Microscopy and Analysis, 1979, P135
[5] FATHY D, J MICROSC SPECTROSC
[6] FATHY D, 1978, REV MICROSC ELECTRON, V5, P236
[7] THRESHOLD VOLTAGE FOR DAMAGE IN SI UNDER ELECTRON-BOMBARDMENT
FRASER, HL
[J]. SCRIPTA METALLURGICA, 1977, 11 (01): : 47 - 49
[8] Gonzales A. J., 1974, Scanning Electron Microscopy 1974, P941
[9] Matsukawa T., 1973, Scanning Electron Microscopy 1973, P277
[10] Ourmazd A., 1977, Developments in Electron Microscopy and Analysis 1977, P251