The strong degradation of 30 Å gate oxide integrity contaminated by copper

被引：17

作者：

Lin, YH ^{[1
]}

Chen, YC

Chan, KT

Pan, FM

Hsieh, IJ

Chin, A

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Chung Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Natl Nano Device Lab, Hsinchu, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 04期

关键词：

D O I：

10.1149/1.1357182

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A much higher leakage current, a lower breakdown effective field, a poorer charge-to-breakdown, and worse stress-induced leakage current are observed in ultrathin 30 Angstrom oxides even at a low Cu contamination of 10 ppb. The strong degradation of the ultrathin gate oxide integrity can be explained by the tunneling barrier lowering and the increased interface trap tunneling due to the presence of Cu in the oxide and at the oxide-Si interface. (C) 2001 The Electrochemical Society.

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页码：F73 / F76

页数：4

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