The effect of native oxide on thin gate oxide integrity

被引：32

作者：

Chin, A ^{[1
]}

Lin, BC

Chen, WJ

Lin, YB

Thai, C

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Yun Lin Polytech Inst, Dept Mech Mat Engn, Huwei, Taiwan

[3] Chung Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 11期

关键词：

D O I：

10.1109/55.728901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.

引用

页码：426 / 428

页数：3

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