Transient ion drift detection of low level copper contamination in silicon

被引：46

作者：

Heiser, T ^{[1
]}

McHugo, S ^{[1
]}

Hieslmair, H ^{[1
]}

Weber, ER ^{[1
]}

机构：

[1] UNIV STRASBOURG 1,LAB PHASE,CNRS,F-67037 STRASBOURG 2,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 26期

关键词：

D O I：

10.1063/1.119238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transient ion drift (no) method was used to measure quenched interstitial copper concentrations in both copper plated and copper implanted silicon. Comparison with existing literature data allows one to conclude that, contrary to the general expectation, it is possible to quench in most of the Cu dissolved at temperatures of 600 degrees C and below, This result suggests that the TID technique could be an excellent means to detect copper contamination in p-type silicon. The expected detection limit, on the order of 10(11) cm(-3), makes the method a potentially interesting tool to use in gettering or in-diffusion barrier studies. (C) 1997 American Institute of Physics.

引用

页码：3576 / 3578

页数：3

共 17 条

[1] DEEP LEVELS OF COPPER IN SILICON [J].