DEFECT REACTIONS IN CU-DOPED SILICON-CRYSTALS

被引:67
作者
LEMKE, H
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期
关键词
D O I
10.1002/pssa.2210950237
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:665 / 677
页数:13
相关论文
共 10 条
[1]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[2]   PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].
COLLINS, CB ;
CARLSON, RO .
PHYSICAL REVIEW, 1957, 108 (06) :1409-1414
[3]   ELECTRONIC-STRUCTURE OF COPPER, SILVER, AND GOLD IMPURITIES IN SILICON [J].
FAZZIO, A ;
CALDAS, MJ ;
ZUNGER, A .
PHYSICAL REVIEW B, 1985, 32 (02) :934-954
[4]  
GRAFF K, 1981, SEMICONDUCTOR SILICO, P331
[5]   DOPING PROPERTIES OF RHODIUM AND IRIDIUM IN SILICIUM [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (01) :143-152
[6]   PROPERTIES OF SUBSTITUTIONALLY DISSOLVED MAGNESIUM IN SILICON [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :637-643
[7]   IRREGULARITY REACTIONS IN AU-DOPED SILICON-CRYSTALS [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (02) :K139-K143
[8]   DOPING PROPERTIES OF COBALT IN SILICIUM [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (02) :649-659
[9]  
LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223
[10]   COPPER IMPURITY LEVELS IN SILICON [J].
TOYAMA, N .
SOLID-STATE ELECTRONICS, 1983, 26 (01) :37-46