COPPER IMPURITY LEVELS IN SILICON

[1] AKHMEDOVA MM, 1976, SOV PHYS SEMICOND+, V10, P1400

[2] COPPER IN SILICON N+-P JUNCTIONS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (02): : K165 - +

[3] SPECTROSCOPY STUDY OF COPPER IMPURITIES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5622 - 5623

[4] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +

[7] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[8] A STUDY OF PENDELLOSUNG FRINGES IN X-RAY DIFFRACTION [J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (10): : 787 - &

[9] KATO N, 1973, SOLIDI A, V20, P601

[10] LANDSBERG PT, 1977, J PHYS D, V10, P2476

[1] AKHMEDOVA MM, 1976, SOV PHYS SEMICOND+, V10, P1400

[2] COPPER IN SILICON N+-P JUNCTIONS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (02): : K165 - +

[3] SPECTROSCOPY STUDY OF COPPER IMPURITIES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5622 - 5623

[4] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +

[7] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[8] A STUDY OF PENDELLOSUNG FRINGES IN X-RAY DIFFRACTION [J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (10): : 787 - &

[9] KATO N, 1973, SOLIDI A, V20, P601

[10] LANDSBERG PT, 1977, J PHYS D, V10, P2476