SPECTROSCOPY STUDY OF COPPER IMPURITIES IN SILICON

被引：3

作者：

CHEN, CS ^{[1
]}

CORELLI, JC ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DIV NUCL ENGN,TROY,NY 12181

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期

关键词：

D O I：

10.1063/1.1662209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5622 / 5623

页数：2

共 9 条

[1]

Chen C. S., 1971, Radiation Effects, V9, P75, DOI 10.1080/00337577108242035

[2] OPTICAL STUDY OF LITHIUM-DEFECT COMPLEXES IN IRRADIATED SILICON [J].

CHEN, CS ;

CORELLI, JC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2483-2489

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[4] ELECTROLYSIS OF COPPER IN SOLID SILICON [J].

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[5] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[6] HABIT AND MORPHOLOGY OF COPPER PRECIPITATES IN SILICON [J].

HU, SM ;

POPONIAK, MR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2067-&

[7] EFFECTS OF DOSAGE + IMPURITIES ON RADIATION DAMAGE OF CARRIER LIFE TIME IN SI [J].

NAKANO, T ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) :851-&

[8]

TKACHEV VD, 1964, SOV PHYS-SOL STATE, V5, P2333

[9] EFFECTS OF IMPURITIES ON RADIATION DAMAGE AND ANNEALING BEHAVIOR OF SI SOLAR CELLS [J].

USAMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1063-+

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